Experience
- Working as an Assistant Professor
Department of Electronics and Communication Engineering
NIT Sikkim, Sikkim
From Dec 2023
- Workied as temporary faculty
Department of Electronics and Communication Engineering
NIT Sikkim, Sikkim
From July 2019 to Dec 2023
- Worked as an Assistant Professor
Department of Electronics and Communication Engineering
Dr. B.R. Ambedkar NIT Jalandhar, Punjab
From July 2013 to June 2015
- Worked as an Assistant Professor
Department of Electronics and Communication Engineering
NIT Kurukshetra, Haryana
From July 2012 to June 2013
Teachings
Modeling of Digital Systems, Basic Electronics, Microwave Engineering, Microelectronics, RF Circuit Design
Education
- PhD in VLSI DESIGN (2019) from Dr. B R Ambedkar NIT Jalandhar, Jalandhar
- M.Tech. in Microwave Electronics (2012) from University of Delhi, New Delhi
- B.Tech. in Electronics and Communication Engineering (2009) from Uttar Pradesh Technical University, Lucknow
Contact Address :
Department of ECE NIT Sikkim,
Ravangla, Sikkim 737139
Journals:
- Singh, Jeetendra and Raj, Balwinder, "Modeling of Mean Barrier Height Levying Various Image Forces of Metal Insulator Metal Structure to Enhance the Performance of Conductive Filament Based Memristor Model," IEEE Transaction on Nanotechnology, Vol. 17, no. 2, Jan15, 2018, pp. 268-275. DOI: 10.1109/TNANO.2018.2793953
- Singh, Jeetendra and Raj, Balwinder, "Comparative Analysis of Memristor Model for Memories Design," Journal of Semiconductor, IOP Science, Vol. 39, no. 7, 2018, pp. 1-12,.https://doi.org/10.1088/1674-4926/39/7/074006
- Jeetendra Singh and Balwinder Raj, "Temperature Dependent Analytical Modeling and Simulations of Nanoscale Memristor," Engineering Science and Technology, an International Journal, Elsevier, Vol. 21, no. 5, 2018, pp. 862-868,.https://doi.org/10.1016/j.jestch.2018.07.016
- Jeetendra Singh, Sanjeev Kumar Sharma, Balwinder raj, Mamta Khosla, "Analysis of barrier layer thickness on performance of In1-xGaxAs based Gate Stack Cylindrical Gate Nanowire MOSFET." Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers (ASP), Vol. 13, no.10, 2018, pp. 1473-1477,.https://doi.org/10.1166/jno.2018.2374
- Jeetendra Singh, Annuradha, Balwinder raj, and Mamta Khosla, "Design and Performance Analysis of Nano-Scale Memristor-Based Nonvolatile Static Random-Access Memory," Sensor Letters, American Scientific Publishers, Vol. 16, no. 10, 2018, pp. 798-805. https://doi.org/10.1166/sl.2018.4021
- Singh, Jeetendra and Raj, Balwinder," Design and Investigation of 7T2M NVSRAM with Enhanced Stability and Temperature Impact on Store/Restore Energy," IEEE Transaction on VLSI Systems, Vol. 27, no. 6 , 2019 pp. 1322-1328. DOI: 10.1109/TVLSI.2019.2901032
- Singh, Jeetendra and Raj, Balwinder, "Tunnel Current Model of Asymmetric MIM Structure Levying Various Image Forces to Analyze the Characteristics of Filamentary Memristor," Applied Physics A, Springer, Vol. 125, no. 3, 2019, pp. 203-213.https://doi.org/10.1007/s00339-019-2482-3
- Singh, Jeetendra and Raj, Balwinder, "An Accurate and Generic Window function for Non-linear Memristor Model" Computational Electronics, Springer, Vol. 18, no. 2, 2019, pp.640-647.https://doi.org/10.1007/s10825-019-01306-6
- Jeetendra Singh, Balwinder raj, "Enhanced Nonlinear Memristor Model Encapsulating Stochastic Dopant Drift," Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers, Vol. 14 (7), 2019, pp.1-6. https://doi.org/10.1166/jno.2019.2570
- Wadhwa, G. and Singh, J., "Implementation of linearly modulated work function A σ B 1− σ gate electrode and Si 0.55 Ge 0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET," Applied Physics A, 126(11), 2020, pp.1-11, https://doi.org/10.1007/s00339-020-04065-5
- Singh, J., Sharma, S.K. & Raj, B., "Investigation of Inherent Capacitive Effects in Linear Memristor Model", Silicon, Springer, 13, (2021), 3423-3430 https://doi.org/10.1007/s12633-020-00761-2
- Singh, J., "Implementation of Memristor Towards Better Hardware/Software Security Design", Trans. Electr. Electron. Mater., Springer, Vol. 22, (2021), pp. 10-22, https://doi.org/10.1007/s42341-020-00269-x
- Singh, J., Chakraborty, D. & Kumar, N. "Design and Parametric Variation Assessment of Dopingless Nanotube Field-Effect Transistor (DL-NT-FET) for High Performance", Silicon, Springer, Vol. 14 no. 8, (2021), pp. 4097-4105, https://doi.org/10.1007/s12633-021-01182-5
- Wadhwa, G., Kamboj, P., Singh, J. et al. Design and Investigation of Junctionless DGTFET for Biological Molecule Recognition. Trans. Electr. Electron. Mater., Springer, Vol. 22, (2021), pp. 282-289, https://doi.org/10.1007/s42341-020-00234-8.
- Singh, J., Wadhawa, G. Novel Linear Graded Binary Metal Alloy PαQ1-α Gate Electrode and Middle N+ Pocket Si0.5Ge0.5 Vertical TFET for High Performance. Silicon, Springer, Vol. 13, (2021), pp. 2137-2144 2021. https://doi.org/10.1007/s12633-020-00654-4.
- Wadhwa, G., Singh, J. & Raj, B., Design and Investigation of Doped Triple Metal Double Gate Vertical TFET for Performance Enhancement. Silicon, Springer, Vol. 13, (2021), pp. 1839-1849. https://doi.org/10.1007/s12633-020-00585-0.
- Singh, J., Verma, C., "Modeling Methods for Nanoscale Semiconductor Devices", Silicon, Springer, 14, (2022). PP. 5125-5132 https://doi.org/10.1007/s12633-021-01323-w
- Singh, J., Verma, A., Tewari, V.K. et al., "Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement", Silicon 14, (2022), pp. 6311-6319 https://doi.org/10.1007/s12633-021-01419-3.
- Verma, C., Singh, J. Design and Self-Consistent Schrodinger-Poisson Model Simulation of Ultra-Thin Si-Channel Nanowire FET. Silicon, Springer, 14, (2022), pp. 6185-6191 https://doi.org/10.1007/s12633-021-01388-7.
- Verma, C., Singh, J., Tripathi, S.K. et al. Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor. Silicon, Springer, 14, (2022), pp. 6321-6327 https://doi.org/10.1007/s12633-021-01381-0.
- Singh, S., Chauhan, A.K.S., Joshi, G. and Singh, J., "Design and investigation of SiGe heterojunction based charge plasma vertical TFET for biosensing application. Silicon, 14(11), 2022, pp.6193-6204. https://doi.org/10.1007/s12633-021-01384-x.
- Singh, S., Verma, A., Singh, J. and Wadhwa, G., "Investigation of N+ SiGe gate stacked V-TFET based on Dopingless charge plasma foDr gas sensing application", Silicon, Springer, 14(11), 2022, pp.6205-6218. https://doi.org/10.1007/s12633-021-01416-6
- Singh, S., Singh, J., Singh, A.K. et al., "Modeling and Simulation Analysis Hetero Junction Doping Less Vertical TFET For Biomedical Application," Silicon, Springer, 14, (2022), pp. 8001-8008 https://doi.org/10.1007/s12633-021-01576-5
- Singh, J., Singh, S. and Paras, N., "Design and Integration of Vertical TFET and Memristor for Better Realization of Logical Functions", Silicon, Springer, 15, (2), pp. 783-792, 2023. https://doi.org/10.1007/s12633-022-02047-1.
- Jeetendra Singh, Girish Wadhwa, and Balwinder Raj. "Design and sensitivity estimation of linear graded work function gate electrode hetero junction vertical TFET biosensor." Microsystem Technologies, Springer Berlin Heidelberg, 29 (2), pages 279-287, (2023) https://doi.org/10.1007/s00542-023-05424-x.
- S. Singh and J. Singh, "Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma based Junction-less Vertical TFET Structure," Nano, Brief Reports and Reviews, Vol. 18(8), 2350060 (9 pages), 2023 World Scientific Publishing Company https://doi.org/10.1142/S1793292023500601
- Wadhwa, Girish, Jeetendra Singh, Anchal Thakur, and Sheetal Bhandari. "Highly sensitive N+ pocket doped vertical tunnel FET biosensor with wide range work function modulation gate electrodes." Materials Science and Engineering: B, Elsevier 297 (2023): 116730. https://doi.org/10.1016/j.mseb.2023.116730
- Singh, S. and Singh, J., "Design and estimation of GaAsSb/InGaAs hetero-junction double-dual gate vertical tunnel FET (HJ-VTFET) biosensor". Journal of Materials Science: Materials in Electronics, 35(2), p.126, 2024. https://doi.org/10.1007/s10854-023-11865-x
Conferences:
- Singh, Jeetendra and Raj, Balwinder, "Simulation and performance analysis of Ideal memristor Model with Various Window Function to investigate Memristive SRAM Cell" "Emerging Trends in Engineering, Innovation, Technology and Management" (ICET: EITM-2017), NIT Hamirpur, 2017.
- Singh, Jeetendra and Raj, Balwinder, "Frequency Dependent Window Function for Stochastic Nature of Memristor Model," IVTH International Conference on Production and Industrial Engineering, CPIE-2016, Dr B R Ambedkar National Institute of Technology Jalandhar-144011, India, 2016.
- Singh, Jeetendra and Raj, Balwinder, "Fabrication and Electrical Characterization of Memristor" Poster presentation, Centre for Nano Science and Engineering, IISc Bangalore, Nov., 2016.
- Verma chhaya, Singh Jeetendra, and Wadhwa G., "Design and Performance Analysis of FD Silicon on Insulator MOSFET", 6th Students' Conference on Engineering & Systems 2020 (SCES2020), during July 10-12, 2020, organized by the Department of Electrical Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, India, 2020, IEEE.10.1109/SCES50439.2020.9236703, ISBN:978-1-7281-9339-7
Book:
- Raj, B., Gupta, B.B., & Singh, J. (Eds.). (2022). Advanced Circuits and Systems for Healthcare and Security Applications (1st ed.). CRC Press. Pub. Location: Boca Raton https://doi.org/10.1201/9781003189633, eBook ISBN 9781003189633.
Book Chapters:
- Singh, J., Raj, B. and Khan, M., Role of High-Performance VLSI in the Advancement of Healthcare Systems. In Advanced Circuits and Systems for Healthcare and Security Applications, CRC Press,Tailor and Francis, (pp. 147-160). Book ISBN 9781003189633
- Singh, Jeetendra and Raj, Balwinder, "Evaluation of Nanoscale memristor Device for Analog and digital applications" Nanoscale Devices: Physics, Modeling, and Their Application/CRC Press,Tailor and Francis, pp.393, (eISBN-9781351670227), Nov. 2018.
- B. Raj, Jeetendra Singh, Santosh vishwakarma, Shailendra Chauhan "IoT-Based Ambient Intelligence Microcontroller for Remote Temperature Monitoring" Guide to Ambient Intelligence in the IoT Environment:Principles, Technologies and Applications, ISSN: 978-3-030-04172-4, Springer Nature Switzerland AG., pp.177-199, 2019.
- Jeetendra Singh, Balwant Raj, and Balwinder Raj, "Conduction Mechanism and Performance Evaluation of Advance Nanoscale Semiconductor Devices," Nanotechnology CRC Press, Tailor and Francis, eBook ISBN: 9781003082859, pp.109-124, 2020.
- Debopriya, Jeetendra Singh, Shashi bala, "Brace of Nanowire FETs in the Advancements and Miniaturizations of Recent Integrated Circuits Design,"Innovative Applications of Nanowires for Circuit Design", IGI Global, pp. 139-170,EISBN13: 9781799864691, 2021, 10.4018/978-1-7998-6467-7.ch007.
- Shashi Bala, Raj kumar, Jeetendra Singh, Sanjeev Kumar, "Design and Simulation Analysis of NWFET for Digital Application" Innovative Applications of Nanowires for Circuit Design, IGI Global,EISBN13: 9781799864691, pp. 123-138, 2021,
- Raj, B., Singh, J. and Raj, B., "Nanoscale semiconductor devices for reliable robotic systems," Safety, Security, and Reliability of Robotic Systems, CRC Press, Tailor and Francis, eBook ISBN 9781003031352, pp.67-92, 2020.
- Verma, C. and Singh, J., Memristor: A Novel Device for Better Hardware/Software Security. In Nanoelectronic Devices for Hardware and Software Security (pp. 119-138), CRC Press, Tailor and Francis, 2021.eBook ISBN 9781003126645.
- Verma, C. and Singh, J., 2022. NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices. In Sub-Micron Semiconductor Devices (pp. 181-192). CRC Press, eBook ISBN 9781003126393.
- Singh, S., Bhalla, S.K., Singh, J., Gupta, S., Raj, B. and Yadav, N.K., Design and Analysis of Charge Plasma-Based SiGe Vertical TFET for Biosensing Applications. In Advanced Circuits and Systems for Healthcare and Security Applications (pp. 1-18). CRC Press. 9781003189633
- Singh, S., Dwivedi, R., Singh, J. and Raj, B. "Design and investigation of various memristor models for neuromorphic applications." Nanoscale Memristor Device and Circuits Design, Elsevier, pp. 21-38, 2024. ISBN 978-0-323-90793-4